All MOSFET. HGD650N15S Datasheet

 

HGD650N15S Datasheet and Replacement


   Type Designator: HGD650N15S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 44 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: TO-252
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HGD650N15S Datasheet (PDF)

 ..1. Size:894K  cn hunteck
 hgd650n15s.pdf pdf_icon

HGD650N15S

HGD650N15S P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Switching58RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability18 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit DC/DC in Telecoms

 0.1. Size:900K  cn hunteck
 hgd650n15sl.pdf pdf_icon

HGD650N15S

HGD650N15SL P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Switching, Logic Level58RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability66RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness18 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching an

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