HGI050N10AL Datasheet. Specs and Replacement
Type Designator: HGI050N10AL 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 112 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 562 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm
Package: TO-251
HGI050N10AL substitution
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HGI050N10AL datasheet
hgi050n10al.pdf
HGI050N10AL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 6.5 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 112 A ID 100% UIS Tested, 100% Rg Tested Lead Free Drain Application Synchronous Rectification in SMPS TO-251 Hard Switching and Hig... See More ⇒
hgd059n08al hgi059n08al.pdf
, P-1 HGD059N08AL HGI059N08AL 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching, Logic level 4.6 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 7.3 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 88 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification i... See More ⇒
hgd059n08a hgi059n08a.pdf
, P-1 HGD059N08A HGI059N08A 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching 4.9 RDS(on),typ mW Enhanced Body diode dv/dt capability 89 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circu... See More ⇒
Detailed specifications: HGD320N20S, HGD480N15M, HGI480N15M, HGD650N15S, HGD650N15SL, HGD750N15M, HGD750N15ML, HGI750N15ML, IRF9540N, HGI080N08SL, HGD080N08SL, HGI090N06SL, HGD090N06SL, HGI120N10A, HGD120N10A, HGI120N10AL, HGD120N10AL
Keywords - HGI050N10AL MOSFET specs
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History: HGI750N15ML
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