All MOSFET. HGD090N06SL Datasheet

 

HGD090N06SL Datasheet and Replacement


   Type Designator: HGD090N06SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 415 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO-252
 

 HGD090N06SL substitution

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HGD090N06SL Datasheet (PDF)

 ..1. Size:908K  cn hunteck
hgi090n06sl hgd090n06sl.pdf pdf_icon

HGD090N06SL

HGI090N06SL HGD090N06SL, P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level7.3RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability10RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness61 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested40 AID (Package Limited) Lead Free, Halogen FreeApplication

 7.1. Size:986K  cn hunteck
hgd090ne6a hgi090ne6a.pdf pdf_icon

HGD090N06SL

HGD090NE6A , HGI090NE6A P-165V N-Ch Power MOSFETFeature High Speed Power Switching65 VVDS Enhanced Body diode dv/dt capability7.8RDS(on),typ mW Enhanced Avalanche Ruggedness57 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit

 7.2. Size:1141K  cn hunteck
hgd090ne6al hgi090ne6al.pdf pdf_icon

HGD090N06SL

HGD090NE6AL , HGI090NE6AL P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching, Logic level 7.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability10.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness58 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in

 9.1. Size:901K  cn hunteck
hgd093n12sl.pdf pdf_icon

HGD090N06SL

HGD093N12SL P-1120V N-Ch Power MOSFETFeature High Speed Power Switching, Logic Level120 VVDS Enhanced Body diode dv/dt capability7.5RDS(on),typ VGS=10V mW Enhanced Avalanche Ruggedness9.3RDS(on),typ VGS=4.5V mW 100% UIS Tested, 100% Rg Tested81 AID (Sillicon Limited) Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain

Datasheet: HGD650N15SL , HGD750N15M , HGD750N15ML , HGI750N15ML , HGI050N10AL , HGI080N08SL , HGD080N08SL , HGI090N06SL , SPP20N60C3 , HGI120N10A , HGD120N10A , HGI120N10AL , HGD120N10AL , HGI130N12SL , HGD130N12SL , HGI200N10SL , HGD200N10SL .

History: HGP037N10T | PN4118A | CMD5950 | VBE1106N | SM6041CSK | VBM1201K | LSD70R640GT

Keywords - HGD090N06SL MOSFET datasheet

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