All MOSFET. HGD120N10AL Datasheet

 

HGD120N10AL Datasheet and Replacement


   Type Designator: HGD120N10AL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm
   Package: TO-252
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HGD120N10AL Datasheet (PDF)

 ..1. Size:964K  cn hunteck
 hgi120n10al hgd120n10al.pdf pdf_icon

HGD120N10AL

,HGI120N10AL HGD120N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level11.4RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability15.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness60 AID (Silicon limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Drain Synchronous Rectific

 4.1. Size:952K  cn hunteck
 hgi120n10a hgd120n10a.pdf pdf_icon

HGD120N10AL

,HGI120N10A HGD120N10A P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching12.0RDS(on),typ mW Enhanced Body diode dv/dt capability59 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit DC/DC in

 7.1. Size:896K  cn hunteck
 hgd120n06sl hgi120n06sl.pdf pdf_icon

HGD120N10AL

HGD120N06SL , HGI120N06SL P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level8.5RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability12RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness47 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested35 AID (Package Limited) Lead Free, Halogen FreeApplication

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History: IXFH23N80Q | HP16N10 | ELM58822SA | 2SK4198LS | BLF7G21L-160P | AOI4286 | DAMH50N500H

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