HGI130N12SL Datasheet. Specs and Replacement
Type Designator: HGI130N12SL 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 136 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 68 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 222 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm
Package: TO-251
HGI130N12SL substitution
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HGI130N12SL datasheet
hgi130n12sl hgd130n12sl.pdf
HGI130N12SL HGD130N12SL , P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching, Logic Level 9.8 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 12.0 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 68 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous... See More ⇒
Detailed specifications: HGI080N08SL, HGD080N08SL, HGI090N06SL, HGD090N06SL, HGI120N10A, HGD120N10A, HGI120N10AL, HGD120N10AL, K4145, HGD130N12SL, HGI200N10SL, HGD200N10SL, HGK026N15S, HGK030N06S, HGM046NE6A, HGM046NE6AL, HGM059N08AL
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