All MOSFET. HGI130N12SL Datasheet

 

HGI130N12SL Datasheet and Replacement


   Type Designator: HGI130N12SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 68 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 222 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm
   Package: TO-251
 

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HGI130N12SL Datasheet (PDF)

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HGI130N12SL

HGI130N12SL HGD130N12SL, P-1120V N-Ch Power MOSFETFeature 120 VVDS High Speed Power Switching, Logic Level 9.8RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 12.0RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 68 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous

Datasheet: HGI080N08SL , HGD080N08SL , HGI090N06SL , HGD090N06SL , HGI120N10A , HGD120N10A , HGI120N10AL , HGD120N10AL , IRFB3607 , HGD130N12SL , HGI200N10SL , HGD200N10SL , HGK026N15S , HGK030N06S , HGM046NE6A , HGM046NE6AL , HGM059N08AL .

History: APT3580BN | RSR030N06

Keywords - HGI130N12SL MOSFET datasheet

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