All MOSFET. HGI130N12SL Datasheet

 

HGI130N12SL MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGI130N12SL
   Marking Code: GI130N12SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 68 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 31 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 222 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm
   Package: TO-251

 HGI130N12SL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGI130N12SL Datasheet (PDF)

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 hgi130n12sl hgd130n12sl.pdf

HGI130N12SL HGI130N12SL

HGI130N12SL HGD130N12SL, P-1120V N-Ch Power MOSFETFeature 120 VVDS High Speed Power Switching, Logic Level 9.8RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 12.0RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 68 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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