All MOSFET. HGM046NE6AL Datasheet

 

HGM046NE6AL Datasheet and Replacement


   Type Designator: HGM046NE6AL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 36 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 870 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0049 Ohm
   Package: DFN3.3X3.3
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HGM046NE6AL Datasheet (PDF)

 ..1. Size:1141K  cn hunteck
 hgm046ne6al.pdf pdf_icon

HGM046NE6AL

HGM046NE6ALP-165V N-Ch Power MOSFETFeature 65 VVDS High Speed Power Switching, Logic level 4.2RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 6.1RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 69 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 36 A Lead Free, Halogen Free ID (Pacakge Limited)Application Drain Sy

 4.1. Size:1132K  cn hunteck
 hgm046ne6a.pdf pdf_icon

HGM046NE6AL

HGM046NE6AP-165V N-Ch Power MOSFETFeature 65 VVDS High Speed Power Switching 4.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 66 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Drain Synchronous Rectification in SMPS Hard Switching and High Speed Ci

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History: TPC8031-H | RZR040P01 | IXFN40N90P | WMB025N06LG4 | IXTH27N40MB | SVG086R0NSTR | AP9581GS

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