All MOSFET. HGM095NE4SL Datasheet

 

HGM095NE4SL MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGM095NE4SL
   Marking Code: M095NE4L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 26 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 14.5 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 309 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: DFN3.3X3.3

 HGM095NE4SL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGM095NE4SL Datasheet (PDF)

 ..1. Size:1142K  cn hunteck
 hgm095ne4sl.pdf

HGM095NE4SL HGM095NE4SL

HGM095NE4SL P-145V N-Ch Power MOSFETFeature 45 VVDS High Speed Power Switching, Logic Level 7.0RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 9.6RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 37 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 26 A Lead Free, Halogen Free ID (Package Limited)Application Synchronous

 9.1. Size:1174K  cn hunteck
 hgm090ne6a.pdf

HGM095NE4SL HGM095NE4SL

HGM090NE6A P-165V N-Ch Power MOSFETFeature High Speed Power Switching 65 VVDS Enhanced Body diode dv/dt capability 7.8RDS(on),typ mW Enhanced Avalanche Ruggedness 38 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 36 AID (Package Limited) Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switchin

 9.2. Size:1140K  cn hunteck
 hgm098n10al.pdf

HGM095NE4SL HGM095NE4SL

HGM098N10AL P-1100V N-Ch Power MOSFETFeature 100 VVDS High Speed Power Switching, Logic Level 8.0RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 10.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 47.2 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 36 A Lead Free, Halogen Free ID (Package Limited)Application Synchr

 9.3. Size:1314K  cn hunteck
 hgm090ne6al.pdf

HGM095NE4SL HGM095NE4SL

HGM090NE6AL P-165V N-Ch Power MOSFETFeature 65 VVDS High Speed Power Switching, Logic level 7.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 10.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 39 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 36 A Lead Free, Halogen Free ID (Package Limited)Application Synchronou

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