HGM095NE4SL Datasheet. Specs and Replacement
Type Designator: HGM095NE4SL 📄📄
Marking Code: M095NE4L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 26 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
Qg ⓘ - Total Gate Charge: 14.5 nC
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 309 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
Package: DFN3.3X3.3
HGM095NE4SL substitution
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HGM095NE4SL datasheet
hgm095ne4sl.pdf
HGM095NE4SL P-1 45V N-Ch Power MOSFET Feature 45 V VDS High Speed Power Switching, Logic Level 7.0 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 9.6 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 37 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 26 A Lead Free, Halogen Free ID (Package Limited) Application Synchronous... See More ⇒
hgm090ne6a.pdf
HGM090NE6A P-1 65V N-Ch Power MOSFET Feature High Speed Power Switching 65 V VDS Enhanced Body diode dv/dt capability 7.8 RDS(on),typ mW Enhanced Avalanche Ruggedness 38 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 36 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switchin... See More ⇒
hgm098n10al.pdf
HGM098N10AL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 8.0 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 10.5 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 47.2 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 36 A Lead Free, Halogen Free ID (Package Limited) Application Synchr... See More ⇒
hgm090ne6al.pdf
HGM090NE6AL P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching, Logic level 7.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 10.5 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 39 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 36 A Lead Free, Halogen Free ID (Package Limited) Application Synchronou... See More ⇒
Detailed specifications: HGK026N15S, HGK030N06S, HGM046NE6A, HGM046NE6AL, HGM059N08AL, HGM079N06SL, HGM090NE6A, HGM090NE6AL, STP80NF70, HGM098N10AL, HGM110N08A, HGM110N08AL, HGM120N06SL, HGM120N10AL, HGM170N10AL, HGM210N12SL, HGM230N10AL
Keywords - HGM095NE4SL MOSFET specs
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