HGM098N10AL Datasheet. Specs and Replacement

Type Designator: HGM098N10AL  📄📄 

Marking Code: M098N10L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 36 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V

Qg ⓘ - Total Gate Charge: 24 nC

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 273 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0098 Ohm

Package: DFN3.3X3.3

HGM098N10AL substitution

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HGM098N10AL datasheet

 ..1. Size:1140K  cn hunteck
 hgm098n10al.pdf pdf_icon

HGM098N10AL

HGM098N10AL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 8.0 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 10.5 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 47.2 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 36 A Lead Free, Halogen Free ID (Package Limited) Application Synchr... See More ⇒

 9.1. Size:1174K  cn hunteck
 hgm090ne6a.pdf pdf_icon

HGM098N10AL

HGM090NE6A P-1 65V N-Ch Power MOSFET Feature High Speed Power Switching 65 V VDS Enhanced Body diode dv/dt capability 7.8 RDS(on),typ mW Enhanced Avalanche Ruggedness 38 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 36 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switchin... See More ⇒

 9.2. Size:1314K  cn hunteck
 hgm090ne6al.pdf pdf_icon

HGM098N10AL

HGM090NE6AL P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching, Logic level 7.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 10.5 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 39 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 36 A Lead Free, Halogen Free ID (Package Limited) Application Synchronou... See More ⇒

 9.3. Size:1142K  cn hunteck
 hgm095ne4sl.pdf pdf_icon

HGM098N10AL

HGM095NE4SL P-1 45V N-Ch Power MOSFET Feature 45 V VDS High Speed Power Switching, Logic Level 7.0 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 9.6 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 37 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 26 A Lead Free, Halogen Free ID (Package Limited) Application Synchronous... See More ⇒

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Detailed specifications: HGK030N06S, HGM046NE6A, HGM046NE6AL, HGM059N08AL, HGM079N06SL, HGM090NE6A, HGM090NE6AL, HGM095NE4SL, IRFP450, HGM110N08A, HGM110N08AL, HGM120N06SL, HGM120N10AL, HGM170N10AL, HGM210N12SL, HGM230N10AL, HGM290N10SL

Keywords - HGM098N10AL MOSFET specs

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