HGM110N08A Datasheet. Specs and Replacement
Type Designator: HGM110N08A 📄📄
Marking Code: M110N08A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 34 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V
Qg ⓘ - Total Gate Charge: 24 nC
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 219 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
Package: DFN3.3X3.3
HGM110N08A substitution
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HGM110N08A datasheet
hgm110n08a.pdf
HGM110N08A P-1 80V N-Ch Power MOSFET Feature High Speed Power Switching 80 V VDS Enhanced Body diode dv/dt capability 9.6 RDS(on),typ mW Enhanced Avalanche Ruggedness 34 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit DC/DC i... See More ⇒
hgm110n08al.pdf
HGM110N08AL P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching, Logic level 9.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 13.5 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 34 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain ... See More ⇒
Detailed specifications: HGM046NE6A, HGM046NE6AL, HGM059N08AL, HGM079N06SL, HGM090NE6A, HGM090NE6AL, HGM095NE4SL, HGM098N10AL, TK10A60D, HGM110N08AL, HGM120N06SL, HGM120N10AL, HGM170N10AL, HGM210N12SL, HGM230N10AL, HGM290N10SL, HGN012N03AL
Keywords - HGM110N08A MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: HGM120N10AL
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