All MOSFET. HGM110N08A Datasheet

 

HGM110N08A Datasheet and Replacement


   Type Designator: HGM110N08A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 34 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 219 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
   Package: DFN3.3X3.3
 

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HGM110N08A Datasheet (PDF)

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HGM110N08A

HGM110N08A P-180V N-Ch Power MOSFETFeature High Speed Power Switching80 VVDS Enhanced Body diode dv/dt capability9.6RDS(on),typ mW Enhanced Avalanche Ruggedness34 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit DC/DC i

 0.1. Size:901K  cn hunteck
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HGM110N08A

HGM110N08AL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic level 9.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability13.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness34 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain

Datasheet: HGM046NE6A , HGM046NE6AL , HGM059N08AL , HGM079N06SL , HGM090NE6A , HGM090NE6AL , HGM095NE4SL , HGM098N10AL , IRFZ24N , HGM110N08AL , HGM120N06SL , HGM120N10AL , HGM170N10AL , HGM210N12SL , HGM230N10AL , HGM290N10SL , HGN012N03AL .

Keywords - HGM110N08A MOSFET datasheet

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