All MOSFET. HGM120N10AL Datasheet

 

HGM120N10AL Datasheet and Replacement


   Type Designator: HGM120N10AL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 36 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm
   Package: DFN3.3X3.3
 
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HGM120N10AL Datasheet (PDF)

 ..1. Size:1141K  cn hunteck
 hgm120n10al.pdf pdf_icon

HGM120N10AL

HGM120N10ALP-1100V N-Ch Power MOSFETFeature 100 VVDS High Speed Power Switching, Logic Level 11.4RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 15.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 36 AID (Silicon limited) 100% UIS Tested, 100% Rg Tested 36 AID (Package Limited) Lead Free, Halogen Free Application Synch

 7.1. Size:1141K  cn hunteck
 hgm120n06sl.pdf pdf_icon

HGM120N10AL

HGM120N06SL P-160V N-Ch Power MOSFETFeature 60 VVDS High Speed Power Switching, Logic Level 8.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 12RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 33 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 26 A Lead Free, Halogen Free ID (Package Limited)Application Synchronous

Datasheet: HGM079N06SL , HGM090NE6A , HGM090NE6AL , HGM095NE4SL , HGM098N10AL , HGM110N08A , HGM110N08AL , HGM120N06SL , 10N65 , HGM170N10AL , HGM210N12SL , HGM230N10AL , HGM290N10SL , HGN012N03AL , HGN016N04BL , HGN021N06SL , HGN022NE4SL .

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