HGM120N10AL Datasheet. Specs and Replacement

Type Designator: HGM120N10AL  📄📄 

Marking Code: M120N10L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 36 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V

Qg ⓘ - Total Gate Charge: 21 nC

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm

Package: DFN3.3X3.3

HGM120N10AL substitution

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HGM120N10AL datasheet

 ..1. Size:1141K  cn hunteck
 hgm120n10al.pdf pdf_icon

HGM120N10AL

HGM120N10AL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 11.4 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 15.5 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 36 A ID (Silicon limited) 100% UIS Tested, 100% Rg Tested 36 A ID (Package Limited) Lead Free, Halogen Free Application Synch... See More ⇒

 7.1. Size:1141K  cn hunteck
 hgm120n06sl.pdf pdf_icon

HGM120N10AL

HGM120N06SL P-1 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching, Logic Level 8.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 12 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 33 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 26 A Lead Free, Halogen Free ID (Package Limited) Application Synchronous ... See More ⇒

Detailed specifications: HGM079N06SL, HGM090NE6A, HGM090NE6AL, HGM095NE4SL, HGM098N10AL, HGM110N08A, HGM110N08AL, HGM120N06SL, 4N60, HGM170N10AL, HGM210N12SL, HGM230N10AL, HGM290N10SL, HGN012N03AL, HGN016N04BL, HGN021N06SL, HGN022NE4SL

Keywords - HGM120N10AL MOSFET specs

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