All MOSFET. HGM230N10AL Datasheet

 

HGM230N10AL Datasheet and Replacement


   Type Designator: HGM230N10AL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 117 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: DFN3.3X3.3
 

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HGM230N10AL Datasheet (PDF)

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HGM230N10AL

HGM230N10AL P-1100V N-Ch Power MOSFETFeature 100 VVDS High Speed Power Switching, Logic Level 21.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 28RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 20 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS

Datasheet: HGM095NE4SL , HGM098N10AL , HGM110N08A , HGM110N08AL , HGM120N06SL , HGM120N10AL , HGM170N10AL , HGM210N12SL , 5N65 , HGM290N10SL , HGN012N03AL , HGN016N04BL , HGN021N06SL , HGN022NE4SL , HGN023NE6A , HGN023NE6AL , HGN024N06SL .

History: SI8410DB | IPB80N06S2L-11 | AP30T10GK

Keywords - HGM230N10AL MOSFET datasheet

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