All MOSFET. SP2106 Datasheet

 

SP2106 Datasheet and Replacement


   Type Designator: SP2106
   Marking Code: 2106
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 2 nC
   tr ⓘ - Rise Time: 7.2 nS
   Cossⓘ - Output Capacitance: 14 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: PDFN5X6
 

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SP2106 Datasheet (PDF)

 ..1. Size:110K  samhop
 sp2106.pdf pdf_icon

SP2106

GreenProductSP2106aS mHop Microelectronics C orp.Ver 1.1Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) () MaxRugged and reliable.2.0 @ VGS=10VSuface Mount Package.100V 1A2.4 @ VGS=4.5VESD Protected.5 4D2 G 26 3D2 S 2PIN1D1 7 2 G 18 1D1 S 1PDFN 5x6ABSO

 9.1. Size:119K  samhop
 sp2102.pdf pdf_icon

SP2106

GreenProductSP2102aS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.100V 2.0A 216 @ VGS=10VSuface Mount Package.D1 D1 D2 D2DFN 3x3PIN1S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS (TA=25C unless otherwise noted)

 9.2. Size:111K  samhop
 sp2107.pdf pdf_icon

SP2106

GreenProductSP2107aS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) () MaxRugged and reliable.0.8 @ VGS=10VSuface Mount Package.100V 1.2A0.93 @ VGS=4.5VESD Protected.5 4D2 G 26 3D2 S 2PIN1D1 7 2 G 18 1D1 S 1PDFN 5x6A

 9.3. Size:111K  samhop
 sp2103.pdf pdf_icon

SP2106

GreenProductSP2103aS mHop Microelectronics C orp.Ver 1.3Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.220 @ VGS=10VSuface Mount Package.100V 2.2A350 @ VGS=4.5VD1 D1 D2 D2PIN1PDFN 5x6S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS (TA=25C unless

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Keywords - SP2106 MOSFET datasheet

 SP2106 cross reference
 SP2106 equivalent finder
 SP2106 lookup
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