HGN028NE6A Datasheet. Specs and Replacement

Type Designator: HGN028NE6A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 89 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 1501 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm

Package: DFN5X6

HGN028NE6A substitution

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HGN028NE6A datasheet

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 hgn028ne6a.pdf pdf_icon

HGN028NE6A

HGN028NE6A P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching 2.4 RDS(on),typ mW Enhanced Body diode dv/dt capability 130 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and Hi... See More ⇒

 0.1. Size:905K  cn hunteck
 hgn028ne6al.pdf pdf_icon

HGN028NE6A

HGN028NE6AL P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching, Logic Level 2.3 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 3.3 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 129 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 A ID (Package Limited) Lead Free, Halogen Free Drain Application Synchron... See More ⇒

 7.1. Size:908K  cn hunteck
 hgn028n08a.pdf pdf_icon

HGN028NE6A

HGN028N08A P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching 2.6 RDS(on),typ mW Enhanced Body diode dv/dt capability 147 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS Hard Switching and Hi... See More ⇒

 9.1. Size:901K  cn hunteck
 hgn023ne6a.pdf pdf_icon

HGN028NE6A

HGN023NE6A P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching 2.2 RDS(on),typ mW Enhanced Body diode dv/dt capability 162 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS Hard Switching and Hi... See More ⇒

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Detailed specifications: HGN016N04BL, HGN021N06SL, HGN022NE4SL, HGN023NE6A, HGN023NE6AL, HGN024N06SL, HGN027N06S, HGN028N08A, IRFZ24N, HGN028NE6AL, HGN029NE4SL, HGN032NE4S, HGN035N08A, HGN035N08AL, HGN035N10A, HGN035N10AL, HGN036N08A

Keywords - HGN028NE6A MOSFET specs

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