All MOSFET. HGN036N08A Datasheet

 

HGN036N08A Datasheet and Replacement


   Type Designator: HGN036N08A
   Marking Code: GN036N08A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 74 nC
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 1317 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
   Package: DFN5X6
 
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HGN036N08A Datasheet (PDF)

 ..1. Size:765K  cn hunteck
 hgn036n08a.pdf pdf_icon

HGN036N08A

HGN036N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching3.0RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability138 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switch

 0.1. Size:771K  cn hunteck
 hgn036n08al.pdf pdf_icon

HGN036N08A

HGN036N08AL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching2.7RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability3.8RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness138 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Rectificatio

 5.1. Size:776K  cn hunteck
 hgn036n08sl.pdf pdf_icon

HGN036N08A

HGN036N08SL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic level 3.0RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability3.7RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness132 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronou

 5.2. Size:766K  cn hunteck
 hgn036n08s.pdf pdf_icon

HGN036N08A

HGN036N08S P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching3.0RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability131 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switch

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