HGN036N08A - Даташиты. Аналоги. Основные параметры
Наименование производителя: HGN036N08A
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 125 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 60 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 18 ns
Cossⓘ - Выходная емкость: 1317 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0036 Ohm
Тип корпуса: DFN5X6
Аналог (замена) для HGN036N08A
HGN036N08A Datasheet (PDF)
hgn036n08a.pdf

HGN036N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching3.0RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability138 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switch
hgn036n08al.pdf

HGN036N08AL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching2.7RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability3.8RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness138 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Rectificatio
hgn036n08sl.pdf

HGN036N08SL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic level 3.0RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability3.7RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness132 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronou
hgn036n08s.pdf

HGN036N08S P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching3.0RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability131 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switch
Другие MOSFET... HGN028NE6A , HGN028NE6AL , HGN029NE4SL , HGN032NE4S , HGN035N08A , HGN035N08AL , HGN035N10A , HGN035N10AL , NCEP15T14 , HGN036N08AL , HGN036N08S , HGN036N08SL , HGN040N06S , HGN040N06SL , HGN042N10A , HGN042N10AL , HGN042N10S .
History: ME4410AD | 2SK3556-01SJ | TPA65R380C
History: ME4410AD | 2SK3556-01SJ | TPA65R380C



Список транзисторов
Обновления
MOSFET: MPT035N08S | MPT035N08P | MPG150N10S | MPG150N10P | MPG120N06S | MPG120N06P | MPG08N68S | MPG08N68P | MPF10N65 | MDT4N65 | MDT30P10D | MD70N10 | MD50N20 | MD25N50 | MD20N50 | MD100N20
Popular searches
2n2369 equivalent | 2sd313 datasheet | k8a50d datasheet | 2sc381 | datasheet mosfet | 2sk2586 | 13005 transistor | ecg123a