All MOSFET. HGN036N08SL Datasheet

 

HGN036N08SL Datasheet and Replacement


   Type Designator: HGN036N08SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 114 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 555 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
   Package: DFN5X6
 

 HGN036N08SL substitution

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HGN036N08SL Datasheet (PDF)

 ..1. Size:776K  cn hunteck
 hgn036n08sl.pdf pdf_icon

HGN036N08SL

HGN036N08SL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic level 3.0RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability3.7RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness132 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronou

 4.1. Size:766K  cn hunteck
 hgn036n08s.pdf pdf_icon

HGN036N08SL

HGN036N08S P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching3.0RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability131 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switch

 5.1. Size:765K  cn hunteck
 hgn036n08a.pdf pdf_icon

HGN036N08SL

HGN036N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching3.0RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability138 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switch

 5.2. Size:771K  cn hunteck
 hgn036n08al.pdf pdf_icon

HGN036N08SL

HGN036N08AL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching2.7RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability3.8RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness138 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Rectificatio

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Datasheet: HGN032NE4S , HGN035N08A , HGN035N08AL , HGN035N10A , HGN035N10AL , HGN036N08A , HGN036N08AL , HGN036N08S , STP65NF06 , HGN040N06S , HGN040N06SL , HGN042N10A , HGN042N10AL , HGN042N10S , HGN042N10SL , HGN045NE4SL , HGN046NE6A .

History: SFF50N20N | ELM14430AA | IXTH6N150 | RJK0629DPE | IRF3707PBF | MIC94050BM4TR | CED06N7

Keywords - HGN036N08SL MOSFET datasheet

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