All MOSFET. HGN040N06S Datasheet

 

HGN040N06S Datasheet and Replacement


   Type Designator: HGN040N06S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 984 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: DFN5X6
 

 HGN040N06S substitution

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HGN040N06S Datasheet (PDF)

 ..1. Size:899K  cn hunteck
hgn040n06s.pdf pdf_icon

HGN040N06S

HGN040N06S P-160V N-Ch Power MOSFET60 VFeature VDS3.4 Optimized for high speed switching RDS(on),typ mW125 AID (Sillicon Limited) Enhanced Body diode dv/dt capability60 AID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching

 0.1. Size:779K  cn hunteck
hgn040n06sl.pdf pdf_icon

HGN040N06S

HGN040N06SL P-160V N-Ch Power MOSFET60 VVDSFeature3.2RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level4.4RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability120 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Syn

 9.1. Size:1155K  cn hunteck
hgn042n10s.pdf pdf_icon

HGN040N06S

HGN042N10S P-1100V N-Ch Power MOSFET VDSFeature 100 V3.7 RDS(on),typ mW Optimized for high speed smooth switching112 A ID (Sillicon Limited) Enhanced Body diode dv/dt capability60 A ID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication DC-DC Conversion Drain Hard Switching

 9.2. Size:774K  cn hunteck
hgn045ne4sl.pdf pdf_icon

HGN040N06S

HGN045NE4SL P-145V N-Ch Power MOSFET45 VVDSFeature3.5RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level4.6RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability101 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Syn

Datasheet: HGN035N08A , HGN035N08AL , HGN035N10A , HGN035N10AL , HGN036N08A , HGN036N08AL , HGN036N08S , HGN036N08SL , IRF1405 , HGN040N06SL , HGN042N10A , HGN042N10AL , HGN042N10S , HGN042N10SL , HGN045NE4SL , HGN046NE6A , HGN046NE6AL .

History: 6N70KL-TN3-R | SPP03N60C3 | AOB7S60 | TSM2312CX | CJQ4406 | 2N7002NXBK | DMS2085LSD

Keywords - HGN040N06S MOSFET datasheet

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