HGN040N06S Datasheet. Specs and Replacement

Type Designator: HGN040N06S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 984 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: DFN5X6

HGN040N06S substitution

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HGN040N06S datasheet

 ..1. Size:899K  cn hunteck
hgn040n06s.pdf pdf_icon

HGN040N06S

HGN040N06S P-1 60V N-Ch Power MOSFET 60 V Feature VDS 3.4 Optimized for high speed switching RDS(on),typ mW 125 A ID (Sillicon Limited) Enhanced Body diode dv/dt capability 60 A ID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching ... See More ⇒

 0.1. Size:779K  cn hunteck
hgn040n06sl.pdf pdf_icon

HGN040N06S

HGN040N06SL P-1 60V N-Ch Power MOSFET 60 V VDS Feature 3.2 RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level 4.4 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 120 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Syn... See More ⇒

 9.1. Size:1155K  cn hunteck
hgn042n10s.pdf pdf_icon

HGN040N06S

HGN042N10S P-1 100V N-Ch Power MOSFET VDS Feature 100 V 3.7 RDS(on),typ mW Optimized for high speed smooth switching 112 A ID (Sillicon Limited) Enhanced Body diode dv/dt capability 60 A ID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application DC-DC Conversion Drain Hard Switching ... See More ⇒

 9.2. Size:774K  cn hunteck
hgn045ne4sl.pdf pdf_icon

HGN040N06S

HGN045NE4SL P-1 45V N-Ch Power MOSFET 45 V VDS Feature 3.5 RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level 4.6 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 101 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Syn... See More ⇒

Detailed specifications: HGN035N08A, HGN035N08AL, HGN035N10A, HGN035N10AL, HGN036N08A, HGN036N08AL, HGN036N08S, HGN036N08SL, IRF830, HGN040N06SL, HGN042N10A, HGN042N10AL, HGN042N10S, HGN042N10SL, HGN045NE4SL, HGN046NE6A, HGN046NE6AL

Keywords - HGN040N06S MOSFET specs

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