Справочник MOSFET. HGN040N06S

 

HGN040N06S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HGN040N06S
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 60 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 984 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.004 Ohm
   Тип корпуса: DFN5X6

 Аналог (замена) для HGN040N06S

 

 

HGN040N06S Datasheet (PDF)

 ..1. Size:899K  cn hunteck
 hgn040n06s.pdf

HGN040N06S HGN040N06S

HGN040N06S P-160V N-Ch Power MOSFET60 VFeature VDS3.4 Optimized for high speed switching RDS(on),typ mW125 AID (Sillicon Limited) Enhanced Body diode dv/dt capability60 AID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching

 0.1. Size:779K  cn hunteck
 hgn040n06sl.pdf

HGN040N06S HGN040N06S

HGN040N06SL P-160V N-Ch Power MOSFET60 VVDSFeature3.2RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level4.4RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability120 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Syn

 9.1. Size:1155K  cn hunteck
 hgn042n10s.pdf

HGN040N06S HGN040N06S

HGN042N10S P-1100V N-Ch Power MOSFET VDSFeature 100 V3.7 RDS(on),typ mW Optimized for high speed smooth switching112 A ID (Sillicon Limited) Enhanced Body diode dv/dt capability60 A ID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication DC-DC Conversion Drain Hard Switching

 9.2. Size:774K  cn hunteck
 hgn045ne4sl.pdf

HGN040N06S HGN040N06S

HGN045NE4SL P-145V N-Ch Power MOSFET45 VVDSFeature3.5RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level4.6RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability101 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Syn

 9.3. Size:786K  cn hunteck
 hgn042n10al.pdf

HGN040N06S HGN040N06S

HGN042N10AL P-1100V N-Ch Power MOSFET100 VVDSFeature3.4RDS(on),typ VGS=10V m Optimized for high speed smooth switching,Logic level4.6RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability129 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication

 9.4. Size:893K  cn hunteck
 hgn046ne6a.pdf

HGN040N06S HGN040N06S

HGN046NE6A P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching4.1RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability94 AID (Sillicon Limited) Enhanced Avalanche Ruggedness45 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switchin

 9.5. Size:777K  cn hunteck
 hgn042n10a.pdf

HGN040N06S HGN040N06S

HGN042N10A P-1100V N-Ch Power MOSFET100 VVDSFeature3.7RDS(on),typ m Optimized for high speed smooth switching128 AID (Sillicon Limited) Enhanced Body diode dv/dt capability60 AID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication DC-DC Conversion Drain Hard Switching and

 9.6. Size:1077K  cn hunteck
 hgn042n10sl.pdf

HGN040N06S HGN040N06S

P-1HGN042N10SL100V N-Ch Power MOSFET100 VFeature VDS3.5 Optimized for high speed smooth switching,Logic Level RDS(on),typ VGS=10V mW4.4RDS(on),typ VGS=4.5V mW Enhanced Body diode dv/dt capability116 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication

 9.7. Size:893K  cn hunteck
 hgn046ne6al.pdf

HGN040N06S HGN040N06S

HGN046NE6AL P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching, Logic level3.8RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability5.6RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness95 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested45 AID (Pacakge Limited) Lead Free, Halogen FreeApplicationDrain Synchrono

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