HGN052N10SL Datasheet. Specs and Replacement

Type Designator: HGN052N10SL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 323 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm

Package: DFN5X6

HGN052N10SL substitution

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HGN052N10SL datasheet

 ..1. Size:781K  cn hunteck
hgn052n10sl.pdf pdf_icon

HGN052N10SL

HGN052N10SL P-1 100V N-Ch Power MOSFET 100 V VDS Feature 4.6 RDS(on),typ VGS=10V m Optimized for high speed smooth 5.6 RDS(on),typ VGS=4.5V m switching,Logic level 115 A ID (Sillicon Limited) Enhanced Body diode dv/dt capability 60 A ID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Application DC-DC Conversion Dr... See More ⇒

 9.1. Size:902K  cn hunteck
hgn053n06s.pdf pdf_icon

HGN052N10SL

HGN053N06S P-1 60V N-Ch Power MOSFET 60 V VDS Feature 4.1 RDS(on),typ mW Optimized for high speed switching 91 A ID (Sillicon Limited) Enhanced Body diode dv/dt capability 60 A ID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching... See More ⇒

 9.2. Size:891K  cn hunteck
hgn059n08a.pdf pdf_icon

HGN052N10SL

HGN059N08A P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching 4.9 RDS(on),typ mW Enhanced Body diode dv/dt capability 83 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 45 A ID (Pacakge Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS Hard Switching and Hig... See More ⇒

 9.3. Size:898K  cn hunteck
hgn050n10a.pdf pdf_icon

HGN052N10SL

P-1 HGN050N10A 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching 4.5 RDS(on),typ mW Enhanced Body diode dv/dt capability 102 A ID (Silicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free Drain Application Synchronous Rectification in SMPS Hard Switching and High Speed Cir... See More ⇒

Detailed specifications: HGN042N10AL, HGN042N10S, HGN042N10SL, HGN045NE4SL, HGN046NE6A, HGN046NE6AL, HGN050N10A, HGN050N10AL, 60N06, HGN053N06S, HGN053N06SL, HGN055N12S, HGN055N12SL, HGN058N08SL, HGN059N08A, HGN059N08AL, HGN070N12S

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