HGN052N10SL - аналоги и даташиты транзистора

 

HGN052N10SL - Даташиты. Аналоги. Основные параметры


   Наименование производителя: HGN052N10SL
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 60 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 6 ns
   Cossⓘ - Выходная емкость: 323 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0052 Ohm
   Тип корпуса: DFN5X6
 

 Аналог (замена) для HGN052N10SL

   - подбор ⓘ MOSFET транзистора по параметрам

 

HGN052N10SL Datasheet (PDF)

 ..1. Size:781K  cn hunteck
 hgn052n10sl.pdf pdf_icon

HGN052N10SL

HGN052N10SL P-1100V N-Ch Power MOSFET100 VVDSFeature4.6RDS(on),typ VGS=10V m Optimized for high speed smooth 5.6RDS(on),typ VGS=4.5V mswitching,Logic level 115 AID (Sillicon Limited) Enhanced Body diode dv/dt capability60 AID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg TestedApplication DC-DC Conversion Dr

 9.1. Size:902K  cn hunteck
 hgn053n06s.pdf pdf_icon

HGN052N10SL

HGN053N06S P-160V N-Ch Power MOSFET60 VVDSFeature4.1RDS(on),typ mW Optimized for high speed switching91 AID (Sillicon Limited) Enhanced Body diode dv/dt capability60 AID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching

 9.2. Size:891K  cn hunteck
 hgn059n08a.pdf pdf_icon

HGN052N10SL

HGN059N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching4.9RDS(on),typ mW Enhanced Body diode dv/dt capability83 AID (Sillicon Limited) Enhanced Avalanche Ruggedness45 AID (Pacakge Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and Hig

 9.3. Size:898K  cn hunteck
 hgn050n10a.pdf pdf_icon

HGN052N10SL

P-1HGN050N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching4.5RDS(on),typ mW Enhanced Body diode dv/dt capability102 AID (Silicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and High Speed Cir

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... HGN042N10AL , HGN042N10S , HGN042N10SL , HGN045NE4SL , HGN046NE6A , HGN046NE6AL , HGN050N10A , HGN050N10AL , IRFB7545 , HGN053N06S , HGN053N06SL , HGN055N12S , HGN055N12SL , HGN058N08SL , HGN059N08A , HGN059N08AL , HGN070N12S .

History: SUD08P06-155L-GE3

 

 
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