All MOSFET. HGN080N08SL Datasheet

 

HGN080N08SL MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGN080N08SL
   Marking Code: GN080N08SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 40 nC
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 247 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: DFN5X6

 HGN080N08SL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGN080N08SL Datasheet (PDF)

 ..1. Size:765K  cn hunteck
 hgn080n08sl.pdf

HGN080N08SL HGN080N08SL

HGN080N08SL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic LevelVGS=10V6.3RDS(on),typ m Enhanced Body diode dv/dt capabilityVGS=4.5V8.7RDS(on),typ m Enhanced Avalanche Ruggedness85 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested70 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronou

 7.1. Size:920K  cn hunteck
 hgn080n10sl.pdf

HGN080N08SL HGN080N08SL

HGN080N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level6.1RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability7.6RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness74 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Re

 7.2. Size:893K  cn hunteck
 hgn080n10al.pdf

HGN080N08SL HGN080N08SL

HGN080N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level6.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability8.8RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness74.4 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous

 7.3. Size:898K  cn hunteck
 hgn080n10a.pdf

HGN080N08SL HGN080N08SL

P-1HGN080N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching6.8RDS(on),typ mW Enhanced Body diode dv/dt capability76 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit DC/DC in Telecoms and I

 7.4. Size:912K  cn hunteck
 hgn080n10s.pdf

HGN080N08SL HGN080N08SL

HGN080N10S P-1100V N-Ch Power MOSFETFeature High Speed Power Switching100 VVDS Enhanced Body diode dv/dt capability6.7RDS(on),typ mW Enhanced Avalanche Ruggedness74 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplicationDrain Synchronous Rectification in SMPSPin2 Hard Switching and High Speed Circuit DC/DC in Telecoms

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AFN4422 | RJK6013DPE | DMN2005LPK

 

 
Back to Top