Справочник MOSFET. HGN080N08SL

 

HGN080N08SL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HGN080N08SL
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 83 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 70 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 6 ns
   Cossⓘ - Выходная емкость: 247 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.008 Ohm
   Тип корпуса: DFN5X6

 Аналог (замена) для HGN080N08SL

 

 

HGN080N08SL Datasheet (PDF)

 ..1. Size:765K  cn hunteck
 hgn080n08sl.pdf

HGN080N08SL HGN080N08SL

HGN080N08SL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic LevelVGS=10V6.3RDS(on),typ m Enhanced Body diode dv/dt capabilityVGS=4.5V8.7RDS(on),typ m Enhanced Avalanche Ruggedness85 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested70 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronou

 7.1. Size:920K  cn hunteck
 hgn080n10sl.pdf

HGN080N08SL HGN080N08SL

HGN080N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level6.1RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability7.6RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness74 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Re

 7.2. Size:893K  cn hunteck
 hgn080n10al.pdf

HGN080N08SL HGN080N08SL

HGN080N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level6.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability8.8RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness74.4 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous

 7.3. Size:898K  cn hunteck
 hgn080n10a.pdf

HGN080N08SL HGN080N08SL

P-1HGN080N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching6.8RDS(on),typ mW Enhanced Body diode dv/dt capability76 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit DC/DC in Telecoms and I

 7.4. Size:912K  cn hunteck
 hgn080n10s.pdf

HGN080N08SL HGN080N08SL

HGN080N10S P-1100V N-Ch Power MOSFETFeature High Speed Power Switching100 VVDS Enhanced Body diode dv/dt capability6.7RDS(on),typ mW Enhanced Avalanche Ruggedness74 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplicationDrain Synchronous Rectification in SMPSPin2 Hard Switching and High Speed Circuit DC/DC in Telecoms

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