All MOSFET. HGN080N10SL Datasheet

 

HGN080N10SL Datasheet and Replacement


   Type Designator: HGN080N10SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 597 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: DFN5X6
 

 HGN080N10SL substitution

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HGN080N10SL Datasheet (PDF)

 ..1. Size:920K  cn hunteck
 hgn080n10sl.pdf pdf_icon

HGN080N10SL

HGN080N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level6.1RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability7.6RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness74 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Re

 4.1. Size:912K  cn hunteck
 hgn080n10s.pdf pdf_icon

HGN080N10SL

HGN080N10S P-1100V N-Ch Power MOSFETFeature High Speed Power Switching100 VVDS Enhanced Body diode dv/dt capability6.7RDS(on),typ mW Enhanced Avalanche Ruggedness74 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplicationDrain Synchronous Rectification in SMPSPin2 Hard Switching and High Speed Circuit DC/DC in Telecoms

 5.1. Size:893K  cn hunteck
 hgn080n10al.pdf pdf_icon

HGN080N10SL

HGN080N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level6.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability8.8RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness74.4 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous

 5.2. Size:898K  cn hunteck
 hgn080n10a.pdf pdf_icon

HGN080N10SL

P-1HGN080N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching6.8RDS(on),typ mW Enhanced Body diode dv/dt capability76 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit DC/DC in Telecoms and I

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Datasheet: HGN059N08AL , HGN070N12S , HGN070N12SL , HGN077N10SL , HGN080N08SL , HGN080N10A , HGN080N10AL , HGN080N10S , IRF1404 , HGN088N15S , HGN088N15SL , HGN090AE6AL , HGN090N06SL , HGN090NE6A , HGN090NE6AL , HGN093N12S , HGN093N12SL .

History: 25N10G-TM3-T | APT4080BN

Keywords - HGN080N10SL MOSFET datasheet

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