HGN080N10SL Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: HGN080N10SL
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 83 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 60 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 6 ns
Cossⓘ - Выходная емкость: 597 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.008 Ohm
Тип корпуса: DFN5X6
Аналог (замена) для HGN080N10SL
HGN080N10SL Datasheet (PDF)
hgn080n10sl.pdf

HGN080N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level6.1RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability7.6RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness74 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Re
hgn080n10s.pdf

HGN080N10S P-1100V N-Ch Power MOSFETFeature High Speed Power Switching100 VVDS Enhanced Body diode dv/dt capability6.7RDS(on),typ mW Enhanced Avalanche Ruggedness74 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplicationDrain Synchronous Rectification in SMPSPin2 Hard Switching and High Speed Circuit DC/DC in Telecoms
hgn080n10al.pdf

HGN080N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level6.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability8.8RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness74.4 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous
hgn080n10a.pdf

P-1HGN080N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching6.8RDS(on),typ mW Enhanced Body diode dv/dt capability76 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit DC/DC in Telecoms and I
Другие MOSFET... HGN059N08AL , HGN070N12S , HGN070N12SL , HGN077N10SL , HGN080N08SL , HGN080N10A , HGN080N10AL , HGN080N10S , IRF1404 , HGN088N15S , HGN088N15SL , HGN090AE6AL , HGN090N06SL , HGN090NE6A , HGN090NE6AL , HGN093N12S , HGN093N12SL .
History: VBE2102M | OSG80R380HF | FQA11N90 | PD696BA | QM3018D
History: VBE2102M | OSG80R380HF | FQA11N90 | PD696BA | QM3018D



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