HGN088N15SL Datasheet. Specs and Replacement

Type Designator: HGN088N15SL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 139 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 325 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm

Package: DFN5X6

HGN088N15SL substitution

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HGN088N15SL datasheet

 ..1. Size:951K  cn hunteck
 hgn088n15sl.pdf pdf_icon

HGN088N15SL

HGN088N15SL P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching 7.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 8.8 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 87 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Rectification i... See More ⇒

 4.1. Size:1189K  cn hunteck
 hgn088n15s.pdf pdf_icon

HGN088N15SL

HGN088N15S P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching 7.9 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 86 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Ha... See More ⇒

 9.1. Size:920K  cn hunteck
 hgn080n10sl.pdf pdf_icon

HGN088N15SL

HGN080N10SL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 6.1 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 7.6 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 74 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Re... See More ⇒

 9.2. Size:893K  cn hunteck
 hgn080n10al.pdf pdf_icon

HGN088N15SL

HGN080N10AL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 6.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 8.8 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 74.4 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous ... See More ⇒

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Detailed specifications: HGN070N12SL, HGN077N10SL, HGN080N08SL, HGN080N10A, HGN080N10AL, HGN080N10S, HGN080N10SL, HGN088N15S, IRFB4110, HGN090AE6AL, HGN090N06SL, HGN090NE6A, HGN090NE6AL, HGN093N12S, HGN093N12SL, HGN095NE4SL, HGN098N10A

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