All MOSFET. HGN088N15SL Datasheet

 

HGN088N15SL MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGN088N15SL
   Marking Code: GN088N15SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 139 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 62 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 325 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm
   Package: DFN5X6

 HGN088N15SL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGN088N15SL Datasheet (PDF)

 ..1. Size:951K  cn hunteck
 hgn088n15sl.pdf

HGN088N15SL HGN088N15SL

HGN088N15SL P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Switching7.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability8.8RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness87 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Rectification i

 4.1. Size:1189K  cn hunteck
 hgn088n15s.pdf

HGN088N15SL HGN088N15SL

HGN088N15SP-1150V N-Ch Power MOSFETFeature 150 VVDS High Speed Power Switching 7.9RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 86 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Ha

 9.1. Size:920K  cn hunteck
 hgn080n10sl.pdf

HGN088N15SL HGN088N15SL

HGN080N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level6.1RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability7.6RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness74 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Re

 9.2. Size:893K  cn hunteck
 hgn080n10al.pdf

HGN088N15SL HGN088N15SL

HGN080N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level6.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability8.8RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness74.4 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous

 9.3. Size:898K  cn hunteck
 hgn080n10a.pdf

HGN088N15SL HGN088N15SL

P-1HGN080N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching6.8RDS(on),typ mW Enhanced Body diode dv/dt capability76 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit DC/DC in Telecoms and I

 9.4. Size:912K  cn hunteck
 hgn080n10s.pdf

HGN088N15SL HGN088N15SL

HGN080N10S P-1100V N-Ch Power MOSFETFeature High Speed Power Switching100 VVDS Enhanced Body diode dv/dt capability6.7RDS(on),typ mW Enhanced Avalanche Ruggedness74 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplicationDrain Synchronous Rectification in SMPSPin2 Hard Switching and High Speed Circuit DC/DC in Telecoms

 9.5. Size:765K  cn hunteck
 hgn080n08sl.pdf

HGN088N15SL HGN088N15SL

HGN080N08SL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic LevelVGS=10V6.3RDS(on),typ m Enhanced Body diode dv/dt capabilityVGS=4.5V8.7RDS(on),typ m Enhanced Avalanche Ruggedness85 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested70 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronou

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