All MOSFET. HGN110N08AL Datasheet

 

HGN110N08AL Datasheet and Replacement


   Type Designator: HGN110N08AL
   Marking Code: GN110N08AL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 23 nC
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 205 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
   Package: DFN5X6
 

 HGN110N08AL substitution

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HGN110N08AL Datasheet (PDF)

 ..1. Size:914K  cn hunteck
 hgn110n08al.pdf pdf_icon

HGN110N08AL

HGN110N08AL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic level 9.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability13.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness48 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested30 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Re

 4.1. Size:902K  cn hunteck
 hgn110n08a.pdf pdf_icon

HGN110N08AL

HGN110N08A P-180V N-Ch Power MOSFETFeature High Speed Power Switching80 VVDS Enhanced Body diode dv/dt capability9.6RDS(on),typ mW Enhanced Avalanche Ruggedness48 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit DC/DC i

 7.1. Size:779K  cn hunteck
 hgn110n10sl.pdf pdf_icon

HGN110N08AL

HGN110N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level9.2RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability11RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness62 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous

 9.1. Size:1137K  cn hunteck
 hgn119n15s.pdf pdf_icon

HGN110N08AL

HGN119N15SP-1150V N-Ch Power MOSFETFeature 150 VVDS High Speed Power Switching 11.4RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 66 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain H

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History: 2SJ204

Keywords - HGN110N08AL MOSFET datasheet

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