Справочник MOSFET. HGN110N08AL

 

HGN110N08AL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HGN110N08AL
   Маркировка: GN110N08AL
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 30 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 23 nC
   trⓘ - Время нарастания: 3 ns
   Cossⓘ - Выходная емкость: 205 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0115 Ohm
   Тип корпуса: DFN5X6

 Аналог (замена) для HGN110N08AL

 

 

HGN110N08AL Datasheet (PDF)

 ..1. Size:914K  cn hunteck
 hgn110n08al.pdf

HGN110N08AL HGN110N08AL

HGN110N08AL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic level 9.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability13.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness48 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested30 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Re

 4.1. Size:902K  cn hunteck
 hgn110n08a.pdf

HGN110N08AL HGN110N08AL

HGN110N08A P-180V N-Ch Power MOSFETFeature High Speed Power Switching80 VVDS Enhanced Body diode dv/dt capability9.6RDS(on),typ mW Enhanced Avalanche Ruggedness48 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit DC/DC i

 7.1. Size:779K  cn hunteck
 hgn110n10sl.pdf

HGN110N08AL HGN110N08AL

HGN110N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level9.2RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability11RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness62 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous

 9.1. Size:1137K  cn hunteck
 hgn119n15s.pdf

HGN110N08AL HGN110N08AL

HGN119N15SP-1150V N-Ch Power MOSFETFeature 150 VVDS High Speed Power Switching 11.4RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 66 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain H

 9.2. Size:1146K  cn hunteck
 hgn115n15s.pdf

HGN110N08AL HGN110N08AL

HGN115N15S P-1150V N-Ch Power MOSFETFeature 150 VVDS High Speed Power Switching 9.6RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 70 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Har

 9.3. Size:755K  cn hunteck
 hgn115n15sl.pdf

HGN110N08AL HGN110N08AL

HGN115N15SL P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Switching, Logic Level8RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability9.4RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness73.9 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronou

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top