HGN120N10A Datasheet and Replacement
Type Designator: HGN120N10A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 66 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 45 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: DFN5X6
HGN120N10A substitution
HGN120N10A Datasheet (PDF)
hgn120n10a.pdf

HGN120N10A P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching12.0RDS(on),typ mW Enhanced Body diode dv/dt capability50.8 AID (Silicon limited) Enhanced Avalanche Ruggedness45 AID (Package limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and
hgn120n10al.pdf

P-1HGN120N10AL100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level11.4RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability15.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness51 AID (Silicon limited) 100% UIS Tested, 100% Rg Tested45 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous
hgn120n06sl.pdf

HGN120N06SL P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level8.5RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability12RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness47 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested30 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous R
Datasheet: HGN100N12SL , HGN110N08A , HGN110N08AL , HGN110N10SL , HGN115N15S , HGN115N15SL , HGN119N15S , HGN120N06SL , 2N7000 , HGN120N10AL , HGN130N12S , HGN130N12SL , HGN155N15S , HGN170A10AL , HGN170N10AL , HGN190N15S , HGN195N15S .
History: HGN130N12S
Keywords - HGN120N10A MOSFET datasheet
HGN120N10A cross reference
HGN120N10A equivalent finder
HGN120N10A lookup
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HGN120N10A replacement
History: HGN130N12S



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