HGN170N10AL Datasheet. Specs and Replacement

Type Designator: HGN170N10AL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 147 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: DFN5X6

HGN170N10AL substitution

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HGN170N10AL datasheet

 ..1. Size:905K  cn hunteck
 hgn170n10al.pdf pdf_icon

HGN170N10AL

P-1 HGN170N10AL 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 14 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 22 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 44 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 30 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Rec... See More ⇒

 8.1. Size:922K  cn hunteck
 hgn170a10al.pdf pdf_icon

HGN170N10AL

HGN170A10AL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 14 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 22 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 34.8 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 28 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Re... See More ⇒

Detailed specifications: HGN119N15S, HGN120N06SL, HGN120N10A, HGN120N10AL, HGN130N12S, HGN130N12SL, HGN155N15S, HGN170A10AL, SPP20N60C3, HGN190N15S, HGN195N15S, HGN195N15SL, HGN200N10SL, HGN210N12SL, HGN230A10AL, HGN230N10AL, HGN240N15S

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