HGN195N15S Datasheet. Specs and Replacement
Type Designator: HGN195N15S 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 47 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 130 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0195 Ohm
Package: DFN5X6
HGN195N15S substitution
- MOSFET ⓘ Cross-Reference Search
HGN195N15S datasheet
hgn195n15s.pdf
P-1 HGN195N15S 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching 17.0 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 47.3 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circui... See More ⇒
hgn195n15sl.pdf
P-1 HGN195N15SL 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching, Logic Level 17.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 20.0 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 46 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drai... See More ⇒
Detailed specifications: HGN120N10A, HGN120N10AL, HGN130N12S, HGN130N12SL, HGN155N15S, HGN170A10AL, HGN170N10AL, HGN190N15S, K4145, HGN195N15SL, HGN200N10SL, HGN210N12SL, HGN230A10AL, HGN230N10AL, HGN240N15S, HGN290N10SL, HGN320N20S
Keywords - HGN195N15S MOSFET specs
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