All MOSFET. HGN195N15SL Datasheet

 

HGN195N15SL Datasheet and Replacement


   Type Designator: HGN195N15SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 46 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 128 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: DFN5X6
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HGN195N15SL Datasheet (PDF)

 ..1. Size:1004K  cn hunteck
 hgn195n15sl.pdf pdf_icon

HGN195N15SL

P-1HGN195N15SL150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Switching, Logic Level17.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability20.0RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness46 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrai

 4.1. Size:905K  cn hunteck
 hgn195n15s.pdf pdf_icon

HGN195N15SL

P-1HGN195N15S150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Switching17.0RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability47.3 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circui

 9.1. Size:780K  cn hunteck
 hgn190n15s.pdf pdf_icon

HGN195N15SL

HGN190N15S P-1150V N-Ch Power MOSFET150 VVDSFeature15RDS(on),typ m Optimized for high speed smooth switching19RDS(on),max m Enhanced Body diode dv/dt capability60 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication DC-DC Conversion Drain

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: IRF7473 | 2SK1571

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