All MOSFET. HGN210N12SL Datasheet

 

HGN210N12SL Datasheet and Replacement


   Type Designator: HGN210N12SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 69 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 143 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: DFN5X6
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HGN210N12SL Datasheet (PDF)

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HGN210N12SL

HGN210N12SL P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching, Logic Level20RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability25RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness37 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested30 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Rect

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: WMR05P04TS | 2N3797 | MMBF5457 | IRFU430AP | IPD90N06S4-05 | HSBA4006 | STD52P3LLH6

Keywords - HGN210N12SL MOSFET datasheet

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