All MOSFET. HGN210N12SL Datasheet

 

HGN210N12SL Datasheet and Replacement


   Type Designator: HGN210N12SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 69 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 143 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: DFN5X6
 

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HGN210N12SL Datasheet (PDF)

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HGN210N12SL

HGN210N12SL P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching, Logic Level20RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability25RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness37 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested30 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Rect

Datasheet: HGN130N12SL , HGN155N15S , HGN170A10AL , HGN170N10AL , HGN190N15S , HGN195N15S , HGN195N15SL , HGN200N10SL , 4N60 , HGN230A10AL , HGN230N10AL , HGN240N15S , HGN290N10SL , HGN320N20S , HGN320N20SL , HGN480N15M , HGN640N25S .

History: SI7157DP | BL23N50-A | FDH20N40 | WMN10N65C4 | 2N65L-TMS2-T | PDC3964X | HUF76009D3ST

Keywords - HGN210N12SL MOSFET datasheet

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