HGN210N12SL Datasheet. Specs and Replacement

Type Designator: HGN210N12SL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 69 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 143 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: DFN5X6

HGN210N12SL substitution

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HGN210N12SL datasheet

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HGN210N12SL

HGN210N12SL P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching, Logic Level 20 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 25 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 37 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 30 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Rect... See More ⇒

Detailed specifications: HGN130N12SL, HGN155N15S, HGN170A10AL, HGN170N10AL, HGN190N15S, HGN195N15S, HGN195N15SL, HGN200N10SL, 12N60, HGN230A10AL, HGN230N10AL, HGN240N15S, HGN290N10SL, HGN320N20S, HGN320N20SL, HGN480N15M, HGN640N25S

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