HGN650N15S Datasheet. Specs and Replacement
Type Designator: HGN650N15S 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 46 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 44 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: DFN5X6
HGN650N15S substitution
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HGN650N15S datasheet
hgn650n15s.pdf
HGN650N15S P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching 58 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 18 A ID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Drain Synchronous Rectification in SMPS Hard Switching and High Speed Circuit DFN5x6 DC/DC in T... See More ⇒
hgn650n15sl.pdf
HGN650N15SL P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching, Logic Level 58 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 66 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 18 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching an... See More ⇒
Detailed specifications: HGN230A10AL, HGN230N10AL, HGN240N15S, HGN290N10SL, HGN320N20S, HGN320N20SL, HGN480N15M, HGN640N25S, STP80NF70, HGN650N15SL, HGP028NE6AL, HGP035N08AL, HGP042N10AL, HGP045NE4SL, HGP050N10AL, HGP070N12SL, HGP080N10S
Keywords - HGN650N15S MOSFET specs
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