All MOSFET. HGN650N15SL Datasheet

 

HGN650N15SL Datasheet and Replacement


   Type Designator: HGN650N15SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 46 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 43 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: DFN5X6
 

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HGN650N15SL Datasheet (PDF)

 ..1. Size:893K  cn hunteck
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HGN650N15SL

HGN650N15SL P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Switching, Logic Level58RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability66RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness18 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching an

 4.1. Size:892K  cn hunteck
 hgn650n15s.pdf pdf_icon

HGN650N15SL

HGN650N15S P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Switching58RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability18 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Drain Synchronous Rectification in SMPS Hard Switching and High Speed CircuitDFN5x6 DC/DC in T

Datasheet: HGN230N10AL , HGN240N15S , HGN290N10SL , HGN320N20S , HGN320N20SL , HGN480N15M , HGN640N25S , HGN650N15S , IRF1407 , HGP028NE6AL , HGP035N08AL , HGP042N10AL , HGP045NE4SL , HGP050N10AL , HGP070N12SL , HGP080N10S , HGP080N10SL .

History: WMN30N80M3 | NCE60NF055F | 2SK1008-01 | SFF240J | BUZ83 | H04N60F

Keywords - HGN650N15SL MOSFET datasheet

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