All MOSFET. HGP080N10S Datasheet

 

HGP080N10S MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGP080N10S
   Marking Code: GP080N10S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 82 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Total Gate Charge (Qg): 28 nC
   Rise Time (tr): 6 nS
   Drain-Source Capacitance (Cd): 573 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0088 Ohm
   Package: TO-220

 HGP080N10S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGP080N10S Datasheet (PDF)

 ..1. Size:944K  cn hunteck
hgp080n10s.pdf

HGP080N10S
HGP080N10S

HGP080N10S P-1100V N-Ch Power MOSFETFeature High Speed Power Switching100 VVDS Enhanced Body diode dv/dt capability7.1RDS(on),typ mW Enhanced Avalanche Ruggedness82 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplicationDrain Synchronous Rectification in SMPSPin2 Hard Switching and High Speed Circuit DC/DC in Telecoms

 0.1. Size:1002K  cn hunteck
hgp080n10sl.pdf

HGP080N10S
HGP080N10S

HGP080N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level6.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability8RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness85 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain

 5.1. Size:924K  cn hunteck
hgb080n10al hgp080n10al.pdf

HGP080N10S
HGP080N10S

HGB080N10AL , HGP080N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level6.9RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability9RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness7.1RDS(on),typ VGS=10V mW 100% UIS Tested, 100% Rg Tested9.3RDS(on),typ VGS=4.5V mW Lead Free, Halogen Free85 AID (Sillico

 5.2. Size:915K  cn hunteck
hgb080n10a hgp080n10a.pdf

HGP080N10S
HGP080N10S

, P-1HGB080N10AHGP080N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingTO-263 7.6RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 7.6RDS(on),typ mW Enhanced Avalanche Ruggedness84.3 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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