All MOSFET. HGP098N10S Datasheet

 

HGP098N10S Datasheet and Replacement


   Type Designator: HGP098N10S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 468 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0102 Ohm
   Package: TO-220
 

 HGP098N10S substitution

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HGP098N10S Datasheet (PDF)

 ..1. Size:964K  cn hunteck
 hgp098n10s.pdf pdf_icon

HGP098N10S

HGP098N10S P-1100V N-Ch Power MOSFETFeature High Speed Power Switching100 VVDS Enhanced Body diode dv/dt capability9.0RDS(on),typ mW Enhanced Avalanche Ruggedness70 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrainPin2 Hard Switching and High Speed CircuitTO-

 5.1. Size:926K  cn hunteck
 hgb098n10a hgp098n10a.pdf pdf_icon

HGP098N10S

HGB098N10A , P-1HGP098N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingRDS(on),typ TO-263 VGS=10V 8.8 mW Enhanced Body diode dv/dt capabilityRDS(on),typ TO-220 VGS=10V 9.0 mW Enhanced Avalanche Ruggedness70.7 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in

 5.2. Size:924K  cn hunteck
 hgb098n10al hgp098n10al.pdf pdf_icon

HGP098N10S

, P-1HGB098N10ALHGP098N10AL100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level8.1RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability11RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness8.4RDS(on),typ VGS=10V mW 100% UIS Tested, 100% Rg Tested11.3RDS(on),typ VGS=4.5V mW Lead Free, Halogen Free68 AID (Sil

 9.1. Size:816K  cn hunteck
 hgb095ne4sl hgp095ne4sl.pdf pdf_icon

HGP098N10S

HGB095NE4SL , HGP095NE4SL P-145V N-Ch Power MOSFETFeature45 VVDS High Speed Power Switching, Logic Level7.6RDS(on),typ TO-263 VGS=10V m Enhanced Body diode dv/dt capabilityVGS=4.5V10.7RDS(on),typ m Enhanced Avalanche Ruggedness7.9RDS(on),typ TO-220 VGS=10V m 100% UIS Tested, 100% Rg TestedVGS=4.5V11RDS(on),typ m Lead Free, Halogen

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Datasheet: HGP028NE6AL , HGP035N08AL , HGP042N10AL , HGP045NE4SL , HGP050N10AL , HGP070N12SL , HGP080N10S , HGP080N10SL , 13N50 , HGP100N12SL , HGP130N12SL , HGP190N15SL , HGP195N15SL , HGP1K2N20ML , HGP1K2N25ML , HGP230N10A , HGP2K4N25ML .

History: CEB6086 | AP60WN2K3H | CSD25302Q2

Keywords - HGP098N10S MOSFET datasheet

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 HGP098N10S equivalent finder
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