HGP1K2N20ML Datasheet and Replacement
Type Designator: HGP1K2N20ML
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 88 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18.2 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 22 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: TO-220
HGP1K2N20ML substitution
HGP1K2N20ML Datasheet (PDF)
hgp1k2n20ml.pdf

HGP1K2N20ML P-1200V N-Ch Power MOSFETFeature200 VVDS High Speed Power Smooth Switching, Logic Level95RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability106RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness18 AID 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Sp
hgp1k2n25ml.pdf

HGP1K2N25ML P-1250V N-Ch Power MOSFETFeature250 VVDS High Speed Power Smooth Switching, Logic Level87RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability93RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness25 AID 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Spe
Datasheet: HGP070N12SL , HGP080N10S , HGP080N10SL , HGP098N10S , HGP100N12SL , HGP130N12SL , HGP190N15SL , HGP195N15SL , IRF530 , HGP1K2N25ML , HGP230N10A , HGP2K4N25ML , HGS038NE4SL , HGS046NE6A , HGS046NE6AL , HGS048N06SL , HGS054NE4SL .
History: HGN230N10AL | CHM9952AJGP | TTD120N03AT | FQAF16N50 | STP10N65K3
Keywords - HGP1K2N20ML MOSFET datasheet
HGP1K2N20ML cross reference
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History: HGN230N10AL | CHM9952AJGP | TTD120N03AT | FQAF16N50 | STP10N65K3



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