All MOSFET. HGP1K2N20ML Datasheet

 

HGP1K2N20ML MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGP1K2N20ML
   Marking Code: GP1K2N20ML
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 88 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 18.2 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 9.8 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 22 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: TO-220

 HGP1K2N20ML Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGP1K2N20ML Datasheet (PDF)

 ..1. Size:832K  cn hunteck
 hgp1k2n20ml.pdf

HGP1K2N20ML HGP1K2N20ML

HGP1K2N20ML P-1200V N-Ch Power MOSFETFeature200 VVDS High Speed Power Smooth Switching, Logic Level95RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability106RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness18 AID 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Sp

 6.1. Size:823K  cn hunteck
 hgp1k2n25ml.pdf

HGP1K2N20ML HGP1K2N20ML

HGP1K2N25ML P-1250V N-Ch Power MOSFETFeature250 VVDS High Speed Power Smooth Switching, Logic Level87RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability93RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness25 AID 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Spe

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History: SIS412DN

 

 
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