HGP1K2N20ML Datasheet. Specs and Replacement

Type Designator: HGP1K2N20ML  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 88 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18.2 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 22 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm

Package: TO-220

HGP1K2N20ML substitution

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HGP1K2N20ML datasheet

 ..1. Size:832K  cn hunteck
 hgp1k2n20ml.pdf pdf_icon

HGP1K2N20ML

HGP1K2N20ML P-1 200V N-Ch Power MOSFET Feature 200 V VDS High Speed Power Smooth Switching, Logic Level 95 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 106 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 18 A ID 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Sp... See More ⇒

 6.1. Size:823K  cn hunteck
 hgp1k2n25ml.pdf pdf_icon

HGP1K2N20ML

HGP1K2N25ML P-1 250V N-Ch Power MOSFET Feature 250 V VDS High Speed Power Smooth Switching, Logic Level 87 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 93 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 25 A ID 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Spe... See More ⇒

Detailed specifications: HGP070N12SL, HGP080N10S, HGP080N10SL, HGP098N10S, HGP100N12SL, HGP130N12SL, HGP190N15SL, HGP195N15SL, 20N50, HGP1K2N25ML, HGP230N10A, HGP2K4N25ML, HGS038NE4SL, HGS046NE6A, HGS046NE6AL, HGS048N06SL, HGS054NE4SL

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