All MOSFET. HGP230N10A Datasheet

 

HGP230N10A Datasheet and Replacement


   Type Designator: HGP230N10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 31 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 107 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO-220
 

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HGP230N10A Datasheet (PDF)

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HGP230N10A

P-1HGP230N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching22RDS(on),typ mW Enhanced Body diode dv/dt capability31 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPSTO-220 Hard Switching and High Speed Circuit Power ToolsDrain UPSPin2

Datasheet: HGP080N10SL , HGP098N10S , HGP100N12SL , HGP130N12SL , HGP190N15SL , HGP195N15SL , HGP1K2N20ML , HGP1K2N25ML , IRFB31N20D , HGP2K4N25ML , HGS038NE4SL , HGS046NE6A , HGS046NE6AL , HGS048N06SL , HGS054NE4SL , HGS059N08A , HGS059N08AL .

History: RU2H30R | TPB65R260M | WMQ40DN03T1 | HUF76407D3ST | WMS06P04T1

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