All MOSFET. HGP2K4N25ML Datasheet

 

HGP2K4N25ML Datasheet and Replacement


   Type Designator: HGP2K4N25ML
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 88 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 12.8 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 12 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
   Package: TO-220
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HGP2K4N25ML Datasheet (PDF)

 ..1. Size:814K  cn hunteck
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HGP2K4N25ML

HGP2K4N25ML P-1250V N-Ch Power MOSFETFeature250 VVDS High Speed Power Smooth Switching, Logic Level180RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability190RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness13 AID 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High S

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History: CHM85A3PAGP | SFFX054Z | TK7P65W

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