All MOSFET. HGP2K4N25ML Datasheet

 

HGP2K4N25ML Datasheet and Replacement


   Type Designator: HGP2K4N25ML
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 88 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12.8 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 12 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
   Package: TO-220
 

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HGP2K4N25ML Datasheet (PDF)

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HGP2K4N25ML

HGP2K4N25ML P-1250V N-Ch Power MOSFETFeature250 VVDS High Speed Power Smooth Switching, Logic Level180RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability190RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness13 AID 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High S

Datasheet: HGP098N10S , HGP100N12SL , HGP130N12SL , HGP190N15SL , HGP195N15SL , HGP1K2N20ML , HGP1K2N25ML , HGP230N10A , IRF2807 , HGS038NE4SL , HGS046NE6A , HGS046NE6AL , HGS048N06SL , HGS054NE4SL , HGS059N08A , HGS059N08AL , HGS060N06SL .

History: NTHS5445T1 | APT4080BN | 25N10G-TM3-T

Keywords - HGP2K4N25ML MOSFET datasheet

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