HGP2K4N25ML Datasheet. Specs and Replacement

Type Designator: HGP2K4N25ML  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 88 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12.8 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 12 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm

Package: TO-220

HGP2K4N25ML substitution

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HGP2K4N25ML datasheet

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HGP2K4N25ML

HGP2K4N25ML P-1 250V N-Ch Power MOSFET Feature 250 V VDS High Speed Power Smooth Switching, Logic Level 180 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 190 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 13 A ID 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High S... See More ⇒

Detailed specifications: HGP098N10S, HGP100N12SL, HGP130N12SL, HGP190N15SL, HGP195N15SL, HGP1K2N20ML, HGP1K2N25ML, HGP230N10A, STF13NM60N, HGS038NE4SL, HGS046NE6A, HGS046NE6AL, HGS048N06SL, HGS054NE4SL, HGS059N08A, HGS059N08AL, HGS060N06SL

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