HGS046NE6A Datasheet and Replacement
Type Designator: HGS046NE6A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 17 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 769 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm
Package: SOIC-8
HGS046NE6A substitution
HGS046NE6A Datasheet (PDF)
hgs046ne6a.pdf

HGS046NE6A P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching4.7RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability17 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit Pin2
hgs046ne6al.pdf

HGS046NE6ALP-165V N-Ch Power MOSFETFeature 65 VVDS High Speed Power Switching, Logic level 4.3RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 6.3RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 18 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in
hgs048n06sl.pdf

HGS048N06SL P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level3.8RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability4.8RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness21 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPSSOIC-8 Hard Swit
Datasheet: HGP130N12SL , HGP190N15SL , HGP195N15SL , HGP1K2N20ML , HGP1K2N25ML , HGP230N10A , HGP2K4N25ML , HGS038NE4SL , IRF830 , HGS046NE6AL , HGS048N06SL , HGS054NE4SL , HGS059N08A , HGS059N08AL , HGS060N06SL , HGS063N08SL , HGS080N10AL .
History: IRFB7740
Keywords - HGS046NE6A MOSFET datasheet
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HGS046NE6A equivalent finder
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HGS046NE6A replacement
History: IRFB7740



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