HGS046NE6A Datasheet. Specs and Replacement
Type Designator: HGS046NE6A 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 17 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 769 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm
Package: SOIC-8
HGS046NE6A substitution
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HGS046NE6A datasheet
hgs046ne6a.pdf
HGS046NE6A P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching 4.7 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 17 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit Pin2... See More ⇒
hgs046ne6al.pdf
HGS046NE6AL P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching, Logic level 4.3 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 6.3 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 18 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in... See More ⇒
hgs048n06sl.pdf
HGS048N06SL P-1 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching, Logic Level 3.8 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 4.8 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 21 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS SOIC-8 Hard Swit... See More ⇒
Detailed specifications: HGP130N12SL, HGP190N15SL, HGP195N15SL, HGP1K2N20ML, HGP1K2N25ML, HGP230N10A, HGP2K4N25ML, HGS038NE4SL, 2N60, HGS046NE6AL, HGS048N06SL, HGS054NE4SL, HGS059N08A, HGS059N08AL, HGS060N06SL, HGS063N08SL, HGS080N10AL
Keywords - HGS046NE6A MOSFET specs
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