All MOSFET. HGS046NE6AL Datasheet

 

HGS046NE6AL MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGS046NE6AL
   Marking Code: GS046NE6AL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 41 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 870 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm
   Package: SOIC-8

 HGS046NE6AL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGS046NE6AL Datasheet (PDF)

 ..1. Size:1147K  cn hunteck
 hgs046ne6al.pdf

HGS046NE6AL HGS046NE6AL

HGS046NE6ALP-165V N-Ch Power MOSFETFeature 65 VVDS High Speed Power Switching, Logic level 4.3RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 6.3RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 18 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in

 4.1. Size:909K  cn hunteck
 hgs046ne6a.pdf

HGS046NE6AL HGS046NE6AL

HGS046NE6A P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching4.7RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability17 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit Pin2

 9.1. Size:1008K  cn hunteck
 hgs048n06sl.pdf

HGS046NE6AL HGS046NE6AL

HGS048N06SL P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level3.8RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability4.8RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness21 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPSSOIC-8 Hard Swit

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