HGS054NE4SL Datasheet and Replacement
Type Designator: HGS054NE4SL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 756 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm
Package: SOIC-8
HGS054NE4SL substitution
HGS054NE4SL Datasheet (PDF)
hgs054ne4sl.pdf

HGS054NE4SL P-145V N-Ch Power MOSFETFeature45 VVDS High Speed Power Switching, Logic Level3.8RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability5.3RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness20 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPSSOIC-8 Hard Swit
hgs059n08a.pdf

HGS059N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching5.0RDS(on),typ mW Enhanced Body diode dv/dt capability17 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplicationDrain Synchronous Rectification in SMPS Hard Switching and High Speed CircuitSOIC-8
hgs059n08al.pdf

HGS059N08AL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic level 4.6RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability7.3RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness17 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS
Datasheet: HGP1K2N20ML , HGP1K2N25ML , HGP230N10A , HGP2K4N25ML , HGS038NE4SL , HGS046NE6A , HGS046NE6AL , HGS048N06SL , IRF520 , HGS059N08A , HGS059N08AL , HGS060N06SL , HGS063N08SL , HGS080N10AL , HGS080N10SL , HGS085N10SL , HGS085NE6AL .
History: CTLM8110-M832D | HSS2306A
Keywords - HGS054NE4SL MOSFET datasheet
HGS054NE4SL cross reference
HGS054NE4SL equivalent finder
HGS054NE4SL lookup
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History: CTLM8110-M832D | HSS2306A



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