HGS054NE4SL Datasheet. Specs and Replacement

Type Designator: HGS054NE4SL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 756 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm

Package: SOIC-8

HGS054NE4SL substitution

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HGS054NE4SL datasheet

 ..1. Size:914K  cn hunteck
 hgs054ne4sl.pdf pdf_icon

HGS054NE4SL

HGS054NE4SL P-1 45V N-Ch Power MOSFET Feature 45 V VDS High Speed Power Switching, Logic Level 3.8 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 5.3 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 20 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS SOIC-8 Hard Swit... See More ⇒

 9.1. Size:903K  cn hunteck
 hgs059n08a.pdf pdf_icon

HGS054NE4SL

HGS059N08A P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching 5.0 RDS(on),typ mW Enhanced Body diode dv/dt capability 17 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Drain Synchronous Rectification in SMPS Hard Switching and High Speed Circuit SOIC-8 ... See More ⇒

 9.2. Size:908K  cn hunteck
 hgs059n08al.pdf pdf_icon

HGS054NE4SL

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Detailed specifications: HGP1K2N20ML, HGP1K2N25ML, HGP230N10A, HGP2K4N25ML, HGS038NE4SL, HGS046NE6A, HGS046NE6AL, HGS048N06SL, 75N75, HGS059N08A, HGS059N08AL, HGS060N06SL, HGS063N08SL, HGS080N10AL, HGS080N10SL, HGS085N10SL, HGS085NE6AL

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