HGS054NE4SL MOSFET. Datasheet pdf. Equivalent
Type Designator: HGS054NE4SL
Marking Code: GS054NE4SL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 42 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 756 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm
Package: SOIC-8
HGS054NE4SL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGS054NE4SL Datasheet (PDF)
hgs054ne4sl.pdf
HGS054NE4SL P-145V N-Ch Power MOSFETFeature45 VVDS High Speed Power Switching, Logic Level3.8RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability5.3RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness20 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPSSOIC-8 Hard Swit
hgs059n08a.pdf
HGS059N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching5.0RDS(on),typ mW Enhanced Body diode dv/dt capability17 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplicationDrain Synchronous Rectification in SMPS Hard Switching and High Speed CircuitSOIC-8
hgs059n08al.pdf
HGS059N08AL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic level 4.6RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability7.3RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness17 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: HGP058N08SL | JCS13N90ABA
History: HGP058N08SL | JCS13N90ABA
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