HGS059N08AL Datasheet. Specs and Replacement

Type Designator: HGS059N08AL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 540 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0059 Ohm

Package: SOIC-8

HGS059N08AL substitution

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HGS059N08AL datasheet

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HGS059N08AL

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HGS059N08AL

HGS059N08A P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching 5.0 RDS(on),typ mW Enhanced Body diode dv/dt capability 17 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Drain Synchronous Rectification in SMPS Hard Switching and High Speed Circuit SOIC-8 ... See More ⇒

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HGS059N08AL

HGS054NE4SL P-1 45V N-Ch Power MOSFET Feature 45 V VDS High Speed Power Switching, Logic Level 3.8 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 5.3 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 20 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS SOIC-8 Hard Swit... See More ⇒

Detailed specifications: HGP230N10A, HGP2K4N25ML, HGS038NE4SL, HGS046NE6A, HGS046NE6AL, HGS048N06SL, HGS054NE4SL, HGS059N08A, IRFB31N20D, HGS060N06SL, HGS063N08SL, HGS080N10AL, HGS080N10SL, HGS085N10SL, HGS085NE6AL, HGS089N08SL, HGS090N06SL

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