HGS085N10SL MOSFET. Datasheet pdf. Equivalent
Type Designator: HGS085N10SL
Marking Code: GS085N10SL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 14 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 49 nC
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 270 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: SOIC-8
HGS085N10SL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGS085N10SL Datasheet (PDF)
hgs085n10sl.pdf
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hgs080n10sl.pdf
HGS080N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching,Logic level 7RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability8.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness14 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching an
hgs080n10al.pdf
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hgs089n08sl.pdf
HGS089N08SL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic Level6.4RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability8.6RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness14 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Drain Synchronous Rectification in SMPS Hard Switching and
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