HGS085N10SL Datasheet. Specs and Replacement

Type Designator: HGS085N10SL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 270 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: SOIC-8

HGS085N10SL substitution

- MOSFET ⓘ Cross-Reference Search

 

HGS085N10SL datasheet

 ..1. Size:926K  cn hunteck
 hgs085n10sl.pdf pdf_icon

HGS085N10SL

HGS085N10SL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 7.1 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 8.4 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 14 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS Hard Switching ... See More ⇒

 7.1. Size:927K  cn hunteck
 hgs085ne6al.pdf pdf_icon

HGS085N10SL

HGS085NE6AL P-1 70V N-Ch Power MOSFET Feature 70 V VDS High Speed Power Switching,Logic Level 7 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 10 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 14 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application SOIC-8 Synchronous Rectification in SMPS Drain... See More ⇒

 9.1. Size:917K  cn hunteck
 hgs080n10sl.pdf pdf_icon

HGS085N10SL

HGS080N10SL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching,Logic level 7 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 8.5 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 14 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS Hard Switching an... See More ⇒

 9.2. Size:907K  cn hunteck
 hgs080n10al.pdf pdf_icon

HGS085N10SL

HGS080N10AL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching,Logic level 7 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 9.0 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 14.4 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS Hard Switching ... See More ⇒

SHOW MORE

Detailed specifications: HGS048N06SL, HGS054NE4SL, HGS059N08A, HGS059N08AL, HGS060N06SL, HGS063N08SL, HGS080N10AL, HGS080N10SL, IRFZ46N, HGS085NE6AL, HGS089N08SL, HGS090N06SL, HGS090NE6A, HGS090NE6AL, HGS092NE6AL, HGS095NE4SL, HGS098N06SL

Keywords - HGS085N10SL MOSFET specs

 HGS085N10SL cross reference

 HGS085N10SL equivalent finder

 HGS085N10SL pdf lookup

 HGS085N10SL substitution

 HGS085N10SL replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.