HGS090NE6A Datasheet. Specs and Replacement

Type Designator: HGS090NE6A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 567 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm

Package: SOIC-8

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HGS090NE6A datasheet

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HGS090NE6A

HGS090NE6A P-1 65V N-Ch Power MOSFET Feature High Speed Power Switching 65 V VDS Enhanced Body diode dv/dt capability 7.8 RDS(on),typ mW Enhanced Avalanche Ruggedness 14 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Drain Synchronous Rectification in SMPS Hard Switching and High Speed Circuit SOIC-8 ... See More ⇒

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HGS090NE6A

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HGS090NE6A

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Detailed specifications: HGS060N06SL, HGS063N08SL, HGS080N10AL, HGS080N10SL, HGS085N10SL, HGS085NE6AL, HGS089N08SL, HGS090N06SL, IRFB7545, HGS090NE6AL, HGS092NE6AL, HGS095NE4SL, HGS098N06SL, HGS098N10A, HGS098N10AL, HGS098N10SL, HGS110N08A

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.