HGS090NE6A
MOSFET. Datasheet pdf. Equivalent
Type Designator: HGS090NE6A
Marking Code: GS090NE6A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 3.1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 14
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 20
nC
trⓘ - Rise Time: 4
nS
Cossⓘ -
Output Capacitance: 567
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0095
Ohm
Package:
SOIC-8
HGS090NE6A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGS090NE6A
Datasheet (PDF)
..1. Size:906K cn hunteck
hgs090ne6a.pdf 
HGS090NE6A P-165V N-Ch Power MOSFETFeature High Speed Power Switching65 VVDS Enhanced Body diode dv/dt capability7.8RDS(on),typ mW Enhanced Avalanche Ruggedness14 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Drain Synchronous Rectification in SMPS Hard Switching and High Speed CircuitSOIC-8
0.1. Size:919K cn hunteck
hgs090ne6al.pdf
HGS090NE6AL P-168V N-Ch Power MOSFETFeature68 VVDS High Speed Power Switching,Logic Level7.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability10.2RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness14 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS
7.1. Size:817K cn hunteck
hgs090n06sl.pdf
HGS090N06SL P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching,Logic level 7.5RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability10.2RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness14 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrainSOIC-8Pin2
9.1. Size:912K cn hunteck
hgs098n10a.pdf
HGS098N10A P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching 8.8RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability13 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrainSOIC-8Pin2 Hard Switching and High Speed Circuit2
9.2. Size:915K cn hunteck
hgs098n10sl.pdf
HGS098N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching,Logic level 8.7RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability11RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness13 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching a
9.3. Size:951K cn hunteck
hgs092ne6al.pdf
HGS092NE6AL P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching,Logic Level8.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability12.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness13.4 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainSOIC-8Application Synchronous Rectification i
9.4. Size:901K cn hunteck
hgs095ne4sl.pdf
HGS095NE4SL P-145V N-Ch Power MOSFETFeature45 VVDS High Speed Power Switching, Logic Level7.9RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability11RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness13.5 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPSSOIC-8 Hard Swi
9.5. Size:936K cn hunteck
hgs098n06sl.pdf
HGS098N06SL P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level8.8RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability12.4RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness12.8 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPSSOIC-8 Hard S
9.6. Size:907K cn hunteck
hgs098n10al.pdf
HGS098N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching,Logic level 8.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability11RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness12.9 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching
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