HGS090NE6A Datasheet and Replacement
Type Designator: HGS090NE6A
Marking Code: GS090NE6A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 20 nC
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 567 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
Package: SOIC-8
HGS090NE6A substitution
HGS090NE6A Datasheet (PDF)
hgs090ne6a.pdf

HGS090NE6A P-165V N-Ch Power MOSFETFeature High Speed Power Switching65 VVDS Enhanced Body diode dv/dt capability7.8RDS(on),typ mW Enhanced Avalanche Ruggedness14 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Drain Synchronous Rectification in SMPS Hard Switching and High Speed CircuitSOIC-8
hgs090ne6al.pdf

HGS090NE6AL P-168V N-Ch Power MOSFETFeature68 VVDS High Speed Power Switching,Logic Level7.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability10.2RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness14 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS
hgs090n06sl.pdf

HGS090N06SL P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching,Logic level 7.5RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability10.2RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness14 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrainSOIC-8Pin2
hgs098n10a.pdf

HGS098N10A P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching 8.8RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability13 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrainSOIC-8Pin2 Hard Switching and High Speed Circuit2
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFP460 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
Keywords - HGS090NE6A MOSFET datasheet
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History: AO4407A | IRCP250



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