HGS120N10SL Datasheet. Specs and Replacement
Type Designator: HGS120N10SL 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 162 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: SOIC-8
HGS120N10SL substitution
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HGS120N10SL datasheet
hgs120n10sl.pdf
HGS120N10SL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 9.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 11.5 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 12 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS Hard Switching... See More ⇒
hgs120n10al.pdf
HGS120N10AL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 12.0 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 15.5 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 11 A ID (Silicon limited) 100% UIS Tested, 100% Rg Tested 36 A ID (Package Limited) Lead Free, Halogen Free Application Drain Synchr... See More ⇒
hgs120n06sl.pdf
HGS120N06SL P-1 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching, Logic Level 9 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 12 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 11 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS Hard Switching and H... See More ⇒
Detailed specifications: HGS098N06SL, HGS098N10A, HGS098N10AL, HGS098N10SL, HGS110N08A, HGS110N08AL, HGS120N06SL, HGS120N10AL, IRFZ44N, HGS130N12SL, HGS170N10AL, HGS195N15SL, HGS210N12SL, HGS220N10SL, HGS230N10AL, HGS290N10SL, HGS380N12S
Keywords - HGS120N10SL MOSFET specs
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