All MOSFET. HGS120N10SL Datasheet

 

HGS120N10SL Datasheet and Replacement


   Type Designator: HGS120N10SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 162 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: SOIC-8
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HGS120N10SL Datasheet (PDF)

 ..1. Size:929K  cn hunteck
 hgs120n10sl.pdf pdf_icon

HGS120N10SL

HGS120N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level9.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability11.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness12 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching

 5.1. Size:909K  cn hunteck
 hgs120n10al.pdf pdf_icon

HGS120N10SL

HGS120N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level12.0RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability15.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness11 AID (Silicon limited) 100% UIS Tested, 100% Rg Tested36 AID (Package Limited) Lead Free, Halogen FreeApplicationDrain Synchr

 7.1. Size:906K  cn hunteck
 hgs120n06sl.pdf pdf_icon

HGS120N10SL

HGS120N06SL P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level9RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability12RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness11 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and H

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History: FDMS9620S | WMM11N80M3 | IRFI7536G

Keywords - HGS120N10SL MOSFET datasheet

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