HGS170N10AL Datasheet. Specs and Replacement

Type Designator: HGS170N10AL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 147 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: SOIC-8

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HGS170N10AL datasheet

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HGS170N10AL

HGS170N10AL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching,Logic level 14 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 20 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 10 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS Hard Switching an... See More ⇒

Detailed specifications: HGS098N10AL, HGS098N10SL, HGS110N08A, HGS110N08AL, HGS120N06SL, HGS120N10AL, HGS120N10SL, HGS130N12SL, IRF740, HGS195N15SL, HGS210N12SL, HGS220N10SL, HGS230N10AL, HGS290N10SL, HGS380N12S, HGS480N15M, HGS650N15S

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