HGS170N10AL MOSFET. Datasheet pdf. Equivalent
Type Designator: HGS170N10AL
Marking Code: GS170N10AL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 16 nC
trⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 147 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: SOIC-8
HGS170N10AL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGS170N10AL Datasheet (PDF)
..1. Size:907K cn hunteck
hgs170n10al.pdf
hgs170n10al.pdf
HGS170N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching,Logic level 14RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability20RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness10 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching an
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