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HGS195N15SL Specs and Replacement


   Type Designator: HGS195N15SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 128 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOIC-8
 

 HGS195N15SL substitution

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HGS195N15SL Specs

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HGS195N15SL

HGS195N15SL P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching, Logic Level 17.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 20.0 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 8 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS ... See More ⇒

Detailed specifications: HGS098N10SL , HGS110N08A , HGS110N08AL , HGS120N06SL , HGS120N10AL , HGS120N10SL , HGS130N12SL , HGS170N10AL , IRF840 , HGS210N12SL , HGS220N10SL , HGS230N10AL , HGS290N10SL , HGS380N12S , HGS480N15M , HGS650N15S , HGS650N15SL .

Keywords - HGS195N15SL MOSFET specs

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