HGS195N15SL Datasheet. Specs and Replacement
Type Designator: HGS195N15SL 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 128 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SOIC-8
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HGS195N15SL substitution
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HGS195N15SL datasheet
hgs195n15sl.pdf
HGS195N15SL P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching, Logic Level 17.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 20.0 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 8 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS ... See More ⇒
Detailed specifications: HGS098N10SL, HGS110N08A, HGS110N08AL, HGS120N06SL, HGS120N10AL, HGS120N10SL, HGS130N12SL, HGS170N10AL, IRF740, HGS210N12SL, HGS220N10SL, HGS230N10AL, HGS290N10SL, HGS380N12S, HGS480N15M, HGS650N15S, HGS650N15SL
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