HGS220N10SL Datasheet and Replacement
Type Designator: HGS220N10SL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 2 nS
Cossⓘ - Output Capacitance: 104 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: SOIC-8
HGS220N10SL substitution
HGS220N10SL Datasheet (PDF)
hgs220n10sl.pdf

HGS220N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level.16.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability20.6RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness8 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switchin
Datasheet: HGS110N08AL , HGS120N06SL , HGS120N10AL , HGS120N10SL , HGS130N12SL , HGS170N10AL , HGS195N15SL , HGS210N12SL , IRF540N , HGS230N10AL , HGS290N10SL , HGS380N12S , HGS480N15M , HGS650N15S , HGS650N15SL , HGS750N15M , HGS750N15ML .
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