HGS220N10SL Datasheet. Specs and Replacement

Type Designator: HGS220N10SL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2 nS

Cossⓘ - Output Capacitance: 104 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: SOIC-8

HGS220N10SL substitution

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HGS220N10SL datasheet

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HGS220N10SL

HGS220N10SL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level. 16.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 20.6 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 8 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS Hard Switchin... See More ⇒

Detailed specifications: HGS110N08AL, HGS120N06SL, HGS120N10AL, HGS120N10SL, HGS130N12SL, HGS170N10AL, HGS195N15SL, HGS210N12SL, IRF540N, HGS230N10AL, HGS290N10SL, HGS380N12S, HGS480N15M, HGS650N15S, HGS650N15SL, HGS750N15M, HGS750N15ML

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