All MOSFET. HGS650N15S Datasheet

 

HGS650N15S Datasheet and Replacement


   Type Designator: HGS650N15S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 44 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: SOIC-8
 

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HGS650N15S Datasheet (PDF)

 ..1. Size:900K  cn hunteck
 hgs650n15s.pdf pdf_icon

HGS650N15S

HGS650N15S P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Switching58.0RDS(on),typ mW Enhanced Body diode dv/dt capability5 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and High Speed CircuitSOIC-8G

 0.1. Size:904K  cn hunteck
 hgs650n15sl.pdf pdf_icon

HGS650N15S

HGS650N15SL P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Switching, Logic Level58.0RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability66.0RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness5 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS

Datasheet: HGS170N10AL , HGS195N15SL , HGS210N12SL , HGS220N10SL , HGS230N10AL , HGS290N10SL , HGS380N12S , HGS480N15M , IRF640 , HGS650N15SL , HGS750N15M , HGS750N15ML , HGT007NE6A , HGT009N08A , HGT015N10S , HGT016NE6A , HGT019N08A .

History: IRFZ42 | SM6A27NSFP | HGS290N10SL | NCEP15T14 | NUS5530MNR2G

Keywords - HGS650N15S MOSFET datasheet

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