All MOSFET. HGS650N15S Datasheet

 

HGS650N15S MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGS650N15S
   Marking Code: GS650N15S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 44 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: SOIC-8

 HGS650N15S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGS650N15S Datasheet (PDF)

 ..1. Size:900K  cn hunteck
 hgs650n15s.pdf

HGS650N15S HGS650N15S

HGS650N15S P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Switching58.0RDS(on),typ mW Enhanced Body diode dv/dt capability5 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and High Speed CircuitSOIC-8G

 0.1. Size:904K  cn hunteck
 hgs650n15sl.pdf

HGS650N15S HGS650N15S

HGS650N15SL P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Switching, Logic Level58.0RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability66.0RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness5 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS

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