HGS650N15S Datasheet. Specs and Replacement

Type Designator: HGS650N15S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 44 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: SOIC-8

HGS650N15S substitution

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HGS650N15S datasheet

 ..1. Size:900K  cn hunteck
 hgs650n15s.pdf pdf_icon

HGS650N15S

HGS650N15S P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching 58.0 RDS(on),typ mW Enhanced Body diode dv/dt capability 5 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit SOIC-8 G... See More ⇒

 0.1. Size:904K  cn hunteck
 hgs650n15sl.pdf pdf_icon

HGS650N15S

HGS650N15SL P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching, Logic Level 58.0 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 66.0 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 5 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS ... See More ⇒

Detailed specifications: HGS170N10AL, HGS195N15SL, HGS210N12SL, HGS220N10SL, HGS230N10AL, HGS290N10SL, HGS380N12S, HGS480N15M, IRF640, HGS650N15SL, HGS750N15M, HGS750N15ML, HGT007NE6A, HGT009N08A, HGT015N10S, HGT016NE6A, HGT019N08A

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